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| SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SA1108 DESCRIPTION *With MT-200 package *High power dissipation APPLICATIONS *For power amplifier applications PINNING(see Fig.2) PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (MT-200) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -130 -130 -5 -12 -1.2 120 150 -55~150 UNIT V V V A A W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=-25mA ; IB=0 IE=-1mA ; IC=0 IC=-5A ;IB=-0.5A IC=-5A ; VCE=-5V VCB=-130V; IE=0 VEB=-5V; IC=0 IC=-2A ; VCE=-5V IC=-5A ; VCE=-5V IC=-1A ; VCE=-10V 55 35 60 MIN -130 -5 2SA1108 SYMBOL V(BR)CEO V(BR)EBO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT TYP. MAX UNIT V V -2.0 -2.0 -5 -5 160 V V A A MHz 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1108 Fig.2 outline dimensions 3 |
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